
Kingston HyperX 8GB (2x4GB) Memory Kit (Special Edition) 1600MHz DDR3 Non-ECC CL9 240-pin DIMM with Intel XMP Support
Product Code: EXO_K-KHX1600C9D3X2K2/8GManufacturer Code: KHX1600C9D3X2K2/8GX
Stock: Yes
Price: £37.92 (ex VAT).
Price: £45.50 (inc VAT).
Kingston's KHX1600C9D3X2K2/8GX is a kit of two 512M x 64-bit (4GB) DDR3-1600MHz CL9 SDRAM (Synchronous DRAM) memory modules, based on sixteen 256M x 8-bit DDR3 FBGA components per module. Each module kit supports Intel XMP (Extreme Memory Profiles). Total kit capacity is 8GB. Each module kit has been tested to run at DDR3- 1600MHz at a low latency timing of 9-9-9-27 at 1.65V. The SPDs are programmed to JEDEC standard latency DDR3- 1333MHz timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires +1.5V.
DDR3 is the third generation of Double Data Rate (DDR) SDRAM memory. Similar to DDR2, it is a continuing evolution of DDR memory technology that delivers higher speeds (up to 1600 MHz), lower power consumption and heat dissipation. It is an ideal memory solution for bandwidth hungry systems equipped with dual and quad core processors and the lower power consumption is a perfect match for both server and mobile platforms. Dual In-line Memory Modules, or DIMMs, closely resemble SIMMs. Like SIMMs, most DIMMs install vertically into expansion sockets. The principal difference between the two is that on a SIMM, pins on opposite sides of the board are tied together to form one electrical contact; on a DIMM, opposing pins remain electrically isolated to form two separate contacts.
Lifetime Warranty
- JEDEC standard 1.5V ± 0.075V Power Supply
- VDDQ = 1.5V ± 0.075V
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 5,6,7,8,9,10
- Posted CAS
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB : Height 1.180' (30.00mm), double sided component
| Memory | |
| Memory Size | 8192 MB ( 2 module(s) x 4096 MB ) |
| Memory Type | DDR3 |
| Memory Speed | 1600 MHz |
| Memory Package | DIMM |
| Pin Configuration | 240 pins |
| Error Correction | Non ECC |
| CAS Latency | CL9 |
| Module Configuration | 512M x 64 |
| Electrical | |
| Voltage | 1.65 V |
| Physical | |
| Form Factor | DIMM Module Kit |
| Dimensions | (W) x (D) x (H) |
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